kst - 9091 - 003 1 DP500 pnp silicon transistor description suitable for low voltage large current drivers excellent h fe linearity complementary pair with dn500 switching application ordering information type no. marking package code DP500 DP500 to - 92 outline dimensions unit : mm s s e e m m i i c c o o n n d d u u c c t t o o r r pin connections 1. emitter 2. collector 3. base
kst - 9091 - 003 2 DP500 absolute m aximum r atings (ta=25 c) characteristic symbol r atings unit collector - base voltage v cbo - 15 v collector - emitter voltage v ceo - 12 v emitter - base voltage v ebo - 5 v collector current i c - 5 a collector dissipation p c 625 mw junction temperature t j 150 c storage temperature t stg - 55~150 c * : when mounted on 40 40 0.8mm ceramic substate electrical characteristics (ta=25 c) characteristic symbol test condition min. typ. max. unit collector - base breakdown voltage bv cbo i c = - 50 m a, i e =0 - 15 - - v collector - emitter breakdown voltage bv ceo i c = - 1ma, i b =0 - 12 - - v emitter - base breakdown voltage bv ebo i e = - 50 m a, i c =0 - 5 - - v collector cut - off current i cbo v cb = - 12v, i e =0 - - - 1 m a emitter cut - off current i ebo v eb = - 5v, i c =0 - - - 1 m a h fe1 v ce = - 2v, i c = - 500ma 160 - 320 - dc current gain h fe2 v ce = - 2v, i c = - 3a 40 - - - collector - emitter on voltage v ce(sat1) i c = - 3a, i b = - 150ma - - - 0.5 v base - emitter on voltage v be(sat) i c = - 3a, i b = - 150ma - - - 1.2 v transition frequency f t v cb = - 5v, i c = - 500ma - 150 - mhz collector output capacitance c ob v cb = - 10v, i e =0, f=1mhz - - 50 pf
kst - 9091 - 003 3 DP500 electrical characteristic curves fig. 4 v ce(sat) - i c fig. 1 pc - ta fig. 2 ic - v be fig. 4 v ce(sat) - i c fig. 3 h fe - i c
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